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System

    R&D Furnace

  • -Model : WRHF-6 Series (R&D)
    - Wafer Size : 150mm(6")
    - Type : Horiznotal Furance
    - Compact design, Very small footprint
    - Supported small size sample wafers
    - WINFUS controller

Description




▶ Specification


 Description

Contents

Remark 

 Application Process

 N2,O2,Ar Annealing (Option vacuum pump)

 

 Temperature Control Range

 200 ~ 1400℃ (Temp. Ramp up 200℃/min)

 

 Temperature Control Zone

 3 zone

 

 Temperature Accuracy 

 ±0.5

 

 Uniformity of film thickness

 Wafer Within<3%, Wafer to Water<3%,  Batch to   Batch<3%

 

 Possible Process gases N2, O2, Ar (MFC Control) 
 Wafer Size 150mm↓ 

 Batch size

 4 Wafers

 

 Auto Loader

 N/A

 

 Controller Type

 PC-Base(Windows 7) PLC Control

 

 Dimension (W*D*H) 900 *1700 *1480 
 Power supply 3 Phase 380V, 100A (system will be  modified to country-specific power  supply) 
 Cooling water N/A 
 Compressed Dry Air N/A 
 Heat Exhaust 150 m3/h 

 

SEMITRONIX | System | Diffusion Furnace & LP-CVD | R&D Furnace