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System

    100mm Vertical Furnace (R&D)

  • Model : WMVF-4 Series (R&D)
    -Compace design,Very Small footprint
    -Automatic Boat evevtor
    -Supported smal size sample wafers
    -WINFUS controller

Description



▶ Specification


 Description

Contents

Remark 

 Application Process

 ■ Atmospheric Processes

 Web, Dry Oxidation

 H2,N2 Annealing

 POCL3 Doping

 BBr3,B2H6 Doping

 

 ■ LP-CVD Processes

 Poly Si

 Nitride- Si3N4,SiNx(Low stress 100Mpa)

 Oxide - LTO, HTO,TEOS

 PSG, etc..

 

 

 Temperature Control Range

 200℃ ~ 1150

 

 Temperature Control Zone

 3 zone

 

 Temperature Accuracy 

 ±1℃ at 200℃ ~ 600℃, ±0.5℃ at 700 ~ 1150℃

 

 Uniformity of film thickness

 Wafer Within<3%, Wafer to Water<3%,  Batch to    Batch<3%

 

 Possible Process gases H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6,  PH3, SiH2CL2 
 Wafer Size 150mm↓, 200mm, 300mm 

 Batch size

 50 Wafers

 

 Auto Loader

 1 Axis Elevator

 

 Controller Type

 PLC Base PC Control (Windows 10 compatibility)

 

 Dimension (W*D*H) 850 * 800 * 2000 (mm) 
 Power supply 3 Phase 380V, 100A (system will be  modified to country-  specific power supply) 
 Cooling water Max. 10 LPM / Tube 
 Compressed Dry Air 500 ~ 1000 kPa 
 Heat Exhaust 150 m3/h 

 

SEMITRONIX | System | Diffusion Furnace & LP-CVD | 100mm Vertical Furnace (R&D)