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System

    150mm Horizontal Furnace

  • - Wafer Size : 150mm(6")
    - Type : Horizontal Furance
    - Model : WAHF-6 Series
    - Low cost, High Performance
    - Proccess selectable chamber options available in 2 or 3 stack

Description




▶ Specification


 Description

Contents

Remark 

 Application Process

 ■ Atmospheric Processes

 - Wet, Dry Oxidation

 - Well Drive in

 - H2,N2 Annealing

 - POCL3 Doping

 - BBr3,B2H6 Doping

 

 ■ LP-CVD Processes

 - Poly Si

 - D-Poly Si

 - Nitride : Si3N4

 - Low stress Nitride (below 100MPa)

 - Oxide - LTO, HTO, TEOS

 - Thick Oxide : TEOS (2um↑ )

 - SiC

 

 Temperature Control Range

 200℃ ~ 1250℃ (SiC Tube Option)

 

 Temperature Control Zone

 3 zone (4 zone option)

 

 Temperature Accuracy 

 ±1℃ at 200℃ ~ 600℃, ±0.5℃ at 700 ~ 1150℃

 

 Uniformity of film thickness

 Wafer Within<3%, Wafer to Water<3%,  Batch to Batch<3%

 

 Possible Process gases H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6,  PH3, SiH2CL2 
 Wafer Size 150mm 

 Batch size

 50~100 Wafers (50↑ Option)

 

 Robot Type 

 Soft Landing Type (2 Axis)

 

 Controller Type

 PLC Base PC Control (Windows 10 compatibility)

 

 Dimension (W*D*H) 3850 * 821 * 1845 (mm) 
 Power supply 3 Phase 380V, 100A (system will be  modified to country-specific power  supply) 
 Cooling water Max. 10 LPM / Tube 
 Compressed Dry Air 500 ~ 1000 kPa 
 Heat Exhaust 150 m3/h 

 

SEMITRONIX | System | Diffusion Furnace & LP-CVD | 150mm Horizontal Furnace