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System

    150 mm / 200 mm Horizontal Furnace

  • - Wafer Size : 150mm(6") / 200mm(8")
    - Type : Horizontal Furance
    - Model : WAHF-6,8 Series
    - Low cost, High Performance
    - Proccess selectable chamber options available in 2 or 3,4 stack

Description








▶ Specification


 Description

Contents

Remarks 

 Application Process

 ■ Atmospheric Processes

 - Wet, Dry Oxidation

 - Thick Oxide (15um)

 - Well Drive in

 - H2,N2 Annealing

 - POCL3 Doping

 - BBr3,B2H6 Doping

 

 ■ LP-CVD Processes

 - Poly Si

 - D-Poly Si

 - Nitride : Si3N4

 - Low stress Nitride (250MPa)

 - Super Low stress Nitride (Free ~ 50MPa)

 - Oxide - LTO, MTO, HTO, TEOS

 - Thick Oxide : TEOS (2um↑ )

 - SiC

 

 Temperature Control Range

 - 200℃ ~ 1250℃ (SiC Tube Option)

 

 Temperature Control Zone

 - 3 zone (4,5 zone option)

 

 Temperature Accuracy 

 - ±1℃ at 200℃ ~ 400℃

 - ±0.5℃ at 500 ~ 1250℃

 

 Uniformity of film thickness

 - Wafer within : <3%

 - Wafer to Wafer : <3%

 - Run to Run : <3%

 

 Possible Process gases - H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6,  PH3, SiH2Cl2, TEOS 
 Wafer Size - 150mm / 200mm 

 Process Capacity 

 - 50 / 100 / 150 Wafers

 

 Robot Type 

 - Soft Landing Type (2 Axis)

 

 Controller Type

 - PLC base PC Control (Windows 10 compatibility)

 

 Dimension (W*D*H)

 - 150mm : 4000 x 950 x 1950mm (2 Stack) 

 - 200mm : 4500 x 1000 x 2100mm (2 Stack)

 
 Power supply - 3 Phase 380V, 100A (system will be  modified to country-specific power  supply) 
 Cooling water - Max. 10 LPM / Tube 
 Compressed Dry Air - 500 KPa 
 Heat Exhaust - 150 m3/h 

 

SEMITRONIX | System | Diffusion Furnace & LP-CVD | 150 mm / 200 mm Horizontal Furnace