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System
- - Wafer Size : 200mm(8")
- Type : Vertical Furnace
- Model : W-801M Series
- STOS V3 controller
- Automatic boat elevator
- Low cost, high performance 
200mm Vertical Furnace
Description
▶ Specifications
Description | Contents | Remarks | |||||||||||||||||||||
Application Process | ■ Atmospheric Processes - Wet, Dry Oxidation - Thick Oxidation (15um) - Well Drive in - H2, N2 Annealing - POCL3 Doping - BBr3,B2H6 Doping
■ LP-CVD Processes - Poly Si - D-Poly Si - Nitride : Si3N4 - Low stress Nitride (250MPa) - Super Low stress Nitride (Free ~ 50MPa) - Oxide - LTO, MTO, HTO, TEOS - Thick Oxide : TEOS (2um↑ ) - SiC
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Temperature Control Range | - 200℃ ~ 1150℃ - 200℃ ~ 1250℃ (SiC Tube Option) |
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Temperature Control Zone | - 4 zone |
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Temperature Accuracy | - ±1℃ at 200℃ ~ 400℃ - ±0.5℃ at 500℃ ~ 1250℃ |
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Uniformity of film thickness | - Wafer within : <3% - Wafer to Wafer : <3% - Run to Run : <3% |
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| Possible Process gases | - H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6, PH3, SiH2Cl2, TEOS | ||||||||||||||||||||||
| Wafer Size | - 200mm | ||||||||||||||||||||||
Batch size | - 50 ~ 100 Wafers |
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Boat Elevator | - 1 Axis Auto (Rotation Option) |
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Controller Type | - PLC Base PC Control (Windows 10 compatibility) |
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| Dimension (W*D*H) | - 1700 * 1100 * 2300 (mm) / Capa. 50 wafers. - 1700 * 1100 * 2850 (mm) / Capa. 100 Wafers. | ||||||||||||||||||||||
| Power supply | - 3 Phase 380V, 75A (system will be modified to country-specific power supply) | ||||||||||||||||||||||
| Cooling water | - Max. 10 LPM | ||||||||||||||||||||||
| Compressed Dry Air | - 500 ~ 1000 kPa | ||||||||||||||||||||||
| Heat Exhaust | - 150 m3/h |
