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System

    300mm Vertical Furnace

  • - Wafer Size : 300mm (12")
    - Type : Vertical Furnace
    - Model : W-301M Series
    - STOS V3 controller
    - Automatic boat elevator
    - Low cost,high performance

Description





▶ Specification

 Description

Contents

Remarks 

 Application Process

 ■ Atmospheric Processes

 - Wet, Dry Oxidation

 - Thick Oxidation (15um)

 - Well Drive in

 - H2, N2 Annealing

 

 

 ■ LP-CVD Processes

 - Poly Si

 - D-Poly Si

 - Nitride : Si3N4

 - Low stress Nitride (250MPa)

 - Super Low stress Nitride (Free ~ 50MPa)

 - Oxide - LTO, MTO, HTO, TEOS

 - Thick Oxide : TEOS (2um↑ )

 - SiC CVD

 

 

 Operation Temperature 

 - 200℃ ~ 400℃  / Low Temp Process

 - 400℃ ~ 900℃  / LP-CVD Process 

 - 900℃ ~ 1250℃ / High Temp Process

 

 Temperature Control Zone

 - 4 or 5 zone

 

 Temperature Accuracy 

 - ±1℃ at 200℃ ~ 400℃

 - ±0.5℃ at 500 ~ 1250℃

 

 Uniformity of film thickness

 Wafer within : <3%

 - Wafer to Wafer : <3%

 - Run to Run : <3%

 

 Possible Process gases - H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6,  PH3, SiH2Cl2, TEOS 
 Wafer Size - 300mm 

 Batch size

 - 50 ~ 100 Wafers

 

 Boat Elevator 

 - 1 Axis Auto (Rotation Option)

 

 Controller Type

 - PLC Base PC Control (Windows 10 compatibility)

 

 Dimension (W*D*H)

 - 1700 * 1100 * 2800 (mm) / Capa. 50 wafers.

 - 1700 * 1100 * 3400 (mm) / Capa. 100 Wafers.

 
 Power supply - 3 Phase 380V, 100A (system will be modified to country-specific power  supply) 
 Cooling water - Max. 10 LPM  
 Compressed Dry Air - 500 ~ 1000 kPa 
 Heat Exhaust - 150 m3/h 
SEMITRONIX | System | Diffusion Furnace & LP-CVD | 300mm Vertical Furnace