- Low cost, High Performance, Exceptional Thickness Uniformity
- Process selectable chamber options available in 2 or 3,4 stack
SpecificationsWAHF-6,8 Series
Semitronix Technology Co.,Ltd. provides advanced LPCVD systems capable of achieving Ultra low-stress silicon nitride films, making them highly suitable for MEMS applications requiring precise mechanical stability and thick film deposition.
Application Process |
Atmospheric Processes Wet, Dry Oxidation Thick Oxide (15um) SiC Oxidation Well Drive in H2,N2 Annealing POCL3 Doping BBr3,B2H6 Doping LP-CVD Processes Poly Si D-Poly Si Nitride : Si3N4 Low stress Nitride (250MPa) Ultra Low stress Nitride (0 ~ 50MPa) Oxide – LTO, MTO, HTO, TEOS Thick Oxide : TEOS (2um↑ ) SiC |
Temperature Control Range |
200℃ ~ 1250℃ (SiC Tube Option) 1300℃ ~ 1350℃ |
Temperature Control Zone |
3 zone (4,5 zone option) |
Temperature Accuracy |
±1℃ at 200℃ ~ 400℃ ±0.5℃ at 500℃ ~ 1250℃ |
Uniformity of film thickness |
Wafer within : <2% Wafer to Wafer : <3% Run to Run : <3% |
| Possible Process gases | H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6, PH3, SiH2Cl2, TEOS, BTBAS |
| Wafer Size | 150mm / 200mm |
Process Capacity |
50 / 100 / 150 Wafers |
Robot Type |
Soft Landing Type (2 Axis) |
Controller Type |
PLC base PC Control (Windows 10 compatibility) |
| Dimension (W*D*H) | 150mm : 4000 x 950 x 1950mm (2 Stack) 200mm : 4500 x 1000 x 2100mm (2 Stack) |
| Power supply | 3 Phase 380V, 100A (system will be modified to country-specific power supply) |
| Cooling water | Max. 10 LPM / Tube |
| Compressed Dry Air | 500 KPa |
| Heat Exhaust | 150 m3/h |