R&D Furnace

R&D Furnace
CategoryR&D Furnace
ModelWRHF-6 Series (R&D)
Wafer Size150mm(6")
TypeHorizontal Furance
Compact design, Very small footprint
Supported small size sample wafers
STOS-H controller

Specifications

Description Contents

Application Process

N2,O2,Ar Annealing (Option vacuum pump)

Temperature Control Range

200 ~ 1400℃ (Temp. Ramp up 200℃/min)

Temperature Control Zone

3 zone

Temperature Accuracy

±0.5℃

Uniformity of film thickness

Wafer Within<3%, Wafer to Water<3%,  Run To Run <3%

Possible Process gases N2, O2, Ar (MFC Control)
Wafer Size 100mm,  150mm

Batch size

10 Wafers

Auto Loader

N/A

Controller Type

PC-Base PLC control  (OS : Windows 10)

Dimension (W*D*H) 900 *1700 *1480
Power supply 3 Phase 380V, 100A (system will be  modified to country-specific power  supply)
Cooling water N/A
Compressed Dry Air N/A
Heat Exhaust 150 m3/h
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