300mm Vertical Furnace

300mm Vertical Furnace
Wafer Size300mm (12")
TypeVertical Furnace
  • STOS V3 controller
  • Automatic boat elevator
  • Low cost, high performance, Exceptional Thickness Uniformity

SpecificationsW-301M Series

Application Process

Atmospheric Processes

Wet, Dry Oxidation

Thick Oxidation (15um)

Well Drive in

H2, N2 Annealing

LP-CVD Processes

Poly Si

D-Poly Si

Nitride : Si3N4

Low stress Nitride (250MPa)

Ultra Low stress Nitride (0 ~ 50MPa)

Oxide – LTO, MTO, HTO, TEOS

Thick Oxide : TEOS (2um↑ )

SiC CVD

Operation Temperature

200℃ ~ 400℃  / Low Temp Process

400℃ ~ 900℃  / LP-CVD Process

900℃ ~ 1250℃ / High Temp Process

Temperature Control Zone

4 or 5 zone

Temperature Accuracy

±1℃ at 200℃ ~ 400℃

±0.5℃ at 500℃ ~ 1250℃

Uniformity of film thickness

Wafer within : <3%

Wafer to Wafer : <3%

Run to Run : <3%

Possible Process gases H2, Ar, O2, N2O, N2, SiH4, NH3, B2H6,  PH3, SiH2Cl2, TEOS
Wafer Size 300mm

Batch size

50 ~ 100 Wafers

Boat Elevator

1 Axis Auto (Rotation Option)

Controller Type

PLC Base PC Control (Windows 10 compatibility)

Dimension (W*D*H)

1700 * 1100 * 2800 (mm) / Capacity 50 wafers

1700 * 1100 * 3400 (mm) / Capacity 100 wafers

Power supply 3 Phase 380V, 100A (system will be modified to country-specific power  supply)
Cooling water Max. 10 LPM
Compressed Dry Air 500 KPa
Heat Exhaust 150 m3/h
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